npn bd201 ? bd203 comset semiconductors 1/3 s s i i l l c c o o n n e e p p i i t t a a x x i i a a l l - - b b a a s s e e p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s the bd201 and bd203 are npn transistors mounted in jedec to-220 plastic package. they are primarily intended for use in if-hi equipment delivering an output of 15 to 25 w into 4 ? ? or 8 ? load. pnp complements are bd202 and bd204 compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage bd201 45 v bd203 60 v cbo collector-base voltage bd201 60 v bd203 60 v ebo emitter-base voltage 5.0 v i c collector current i c 8 a i cm 12 a i csm collector current (non-repetitive peak value,t p max.2 ms) 25 a i b base current 3 a p d total device dissipation @ t c = 25 60 w t j junction temperature 150 c t st g storage temperature range -65 to +200 c thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to mounting base 70 k/w r thj-mb thermal resistance, junction to ambient in free air 2.08 k/w
npn bd201 ? bd203 18/10/2012 comset semiconductors 3/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ceo collector cutoff current v ce =30 v, i b =0v bd201 - - 0.2 ma bd203 i cbo collector cutoff current v cb =40 v, i e =0v t j =150c bd201 - - 1 ma bd203 i ebo emitter cutoff current v be =5 v, i c =0 bd201 - - 0.5 ma bd203 v cbo collector-base breakdown voltage i c =1 m a, i e = 0 bd201 60 - - v bd203 v ceo collector emitter breakdown voltage (*) i c =200 m a, i b = 0 bd201 45 - - v bd203 60 - - v ebo emitter base breakdown voltage i e =1 ma, i c =0 bd201 5 - - v bd203 v ce(sat) collector-emitter saturation voltage (*) i c =3 a, i b =300 ma bd201 - - 1 v bd203 i c =6 a, i b =600 ma bd201 - - 1.5 bd203 v be(sat) base-emitter saturation voltage (*) i c =6 a, i b =600 ma bd201 - - 2 bd203 v be base emitter voltage (*) i c =3 a, v ce =2 v bd201 - - 1.5 v bd203 h fe dc current gain (*) i c =3 a, v ce =2 v bd201 30 - - - i c =2 a, v ce =2 v bd203 30 - - f hfe cut-off frequency i c =300 ma, v ce =3 v bd201 25 - - khz bd203 f t transition frequency i c =300 ma, v ce =3 v f= 1mhz bd201 7 - - mhz bd203 i s/b forward bias second breakdown collector current v ce =40 v,t p = 0.1 s t amb = 25 c bd201 1.5 - - a bd203 h fe1 /h fe2 dc current gain i c =1 a, v ce =2 v bd201 2.5 - - - bd203 t on turn-on time i con =2 a i bon = -i boff =200 ma bd201 - - 1 s bd203 t off turn-off time bd201 - - 4 bd203 (*) pulse conditions : tp < 300 s, =2%
npn bd201 ? bd203 18/10/2012 comset semiconductors 3/3 mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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